CGHV27060中文资料60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications数据手册MACOM规格书

描述 Description

The CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small; plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match; which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF; L-band or low S-band (<2.7 GHz). Additionally; the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B; F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.

特性 Features

·From UHF thru 2.7GHz
·16.5 dB Gain at Pulsed PSAT
·70% Efficiency at Pulsed PSAT
·85 W at Pulsed PSAT
·18 dB Gain at Linear PAVE = 14 W
·-35 dBc ACLR at Linear PAVE = 14 W
·33% Efficiency at Linear PAVE = 14 W
·High Degree of DPD Correction Can be Applied

应用 Application

·Pulsed UHF, L-Band, and S-Band
·Communication Amplifiers with 10 to 15 W avg power in high efficiency topologies