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CGHV35060MP中文资料60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations数据手册MACOM规格书

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厂商型号

CGHV35060MP

参数属性

CGHV35060MP 封装/外壳为20-TSSOP(0.173",4.40mm 宽)裸露焊盘;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF MOSFET HEMT 50V 20TSSOP

功能描述

60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations

封装外壳

20-TSSOP(0.173",4.40mm 宽)裸露焊盘

制造商

MACOM Tyco Electronics

数据手册

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更新时间

2025-9-23 20:34:00

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CGHV35060MP规格书详情

描述 Description

The CGHV35060MP is a 60-W input-matched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain; power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier. 

特性 Features

·75W Typical output power
·14.5 dB power gain
·67% Drain efficiency
·Internally pre-matched on input; unmatched output

应用 Application

·S-Band Amplifiers

技术参数

  • 制造商编号

    :CGHV35060MP

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :2700

  • Max Frequency(MHz)

    :3800

  • Peak Output Power(W)

    :60

  • Gain(dB)

    :14.5

  • Efficiency(%)

    :67

  • Operating Voltage(V)

    :50

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Plastic

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
CREE
三年内
1983
只做原装正品
询价
CREE
638
原装正品
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
Cree/Wolfspeed
23+
20TSSOP
9000
原装正品,支持实单
询价
CREE
24+
N/A
90000
进口原装现货假一罚十价格合理
询价
Cree/Wolfspeed
2022+
20-TSSOP
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
CREE/科锐
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MACOM
24+
5000
原装军类可排单
询价
CREE/科锐
23+
1000000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CREE
2308+
原厂原包
6850
十年专业专注 优势渠道商正品保证
询价