CGHV35150数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF
CGHV35150规格书详情
描述 Description
The CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
特性 Features
·Rated Power = 150 W @ TCASE = 85°C
·Operating Frequency = 2.9 – 3.5 GHz
·Transient 100 μsec – 300 μsec @ 20% Duty Cycle
·13.5 dB Power Gain @ TCASE = 85°C
·50 % Typical Drain Efficiency @ TCASE = 85°C
·Input Matched
·<0.3 dB Pulsed Amplitude Droop
应用 Application
·S-Band Radar Amplifiers
技术参数
- 制造商编号
：CGHV35150
- 生产厂家
：MACOM
- Min Frequency(MHz)
：2900
- Max Frequency(MHz)
：3500
- Peak Output Power(W)
：150
- Gain(dB)
：13.5
- Efficiency(%)
：50
- Operating Voltage(V)
：50
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
23+ |
1000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
CREE |
22+ |
N/A |
9000 |
只做原装假一罚十 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
CREE/科锐 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
CREE |
638 |
原装正品 |
询价 | ||||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
CREE |
2023+ |
8700 |
原装现货 |
询价 |
