首页 >CGHV35150>规格书列表

零件型号下载 订购功能描述制造商 上传企业LOGO

CGHV35150

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’sCGHV35150isagalliumnitride(GaN)highelectronmobility transistor(HEMT)designedspecificallywithhighefficiency,highgainandwide bandwidthcapabilities,whichmakestheCGHV35150idealfor2.9-3.5GHz S-Bandradaramplifierapplications.Thetransistoris

WOLFSPEED

WOLFSPEED, INC.

CGHV35150

150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems

The CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)  designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/met; ·Rated Power = 150 W @ TCASE = 85°C\n·Operating Frequency = 2.9 – 3.5 GHz\n·Transient 100 μsec – 300 μsec @ 20% Duty Cycle\n·13.5 dB Power Gain @ TCASE = 85°C\n·50 % Typical Drain Efficiency @ TCASE = 85°C\n·Input Matched\n·<0.3 dB Pulsed Amplitude Droop\n;

MACOMTyco Electronics

玛科姆技术方案控股有限公司

CGHV35150

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CreeCree, Inc

科锐

CGHV35150F-AMP

150-W; 2900 – 3500-MHz; 50-V; GaN HEMT for S-Band Radar Systems

Rated Power = 150 W @ TCASE = 85°COperating Frequency = 2.9 – 3.5 GHzTransient 100 μsec – 300 μsec @ 20% Duty Cycle13.5 dB Power Gain @ TCASE = 85°C50 % Typical Drain Efficiency @ TCASE = 85°CInput Matched<0.3 dB Pulsed Amplitude Droop; • Rated Power = 150 W @ TCASE = 85°C \n•Operating Frequency = 2.9 – 3.5 GHz \n•Transient 100 μsec – 300 μsec @ 20% Duty Cycle \n•13.5 dB Power Gain @ TCASE = 85°C \n•50 % Typical Drain Efficiency @ TCASE = 85°C \n•Input Matched \n•<0.3 dB Pulsed Amplitude Droop\n;

MACOMTyco Electronics

玛科姆技术方案控股有限公司

CGHV35150F

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CreeCree, Inc

科锐

CGHV35150F-AMP

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CreeCree, Inc

科锐

CGHV35150P

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CreeCree, Inc

科锐

CGHV35150-TB

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CreeCree, Inc

科锐

CGHV35150F-AMP

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:CGHV35150F DEV BOARD WITH HEMT

WOLFSPEED

WOLFSPEED, INC.

CGHV35150-TB

包装:散装 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:TEST FIXTURE FOR CGHV35150F

WOLFSPEED

WOLFSPEED, INC.

技术参数

  • Min Frequency(MHz):

    2900

  • Max Frequency(MHz):

    3500

  • Peak Output Power(W):

    150

  • Gain(dB):

    13.5

  • Efficiency(%):

    50

  • Operating Voltage(V):

    50

  • Form:

    Packaged Discrete Transistor

  • Package Category:

    Flange

  • Technology:

    GaN-on-SiC

供应商型号品牌批号封装库存备注价格
CREE/科锐
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CREE
24+
N/A
90000
进口原装现货假一罚十价格合理
询价
CREE
638
原装正品
询价
WOLFSPEED
20+
射频元件
55
就找我吧!--邀您体验愉快问购元件!
询价
Cree
22+
NA
2
加我QQ或微信咨询更多详细信息,
询价
Cree/Wolfspeed
22+
9000
原厂渠道,现货配单
询价
Cree/Wolfspeed
23+
9000
原装正品,支持实单
询价
CREE
2023+
8700
原装现货
询价
CREE/科锐
专业军工
NA
1000
只做原装正品军工级部分订货
询价
CREE
三年内
1983
只做原装正品
询价
更多CGHV35150供应商 更新时间2025-7-31 15:01:00