首页 >CGHV35150-TB>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CGHV35150-TB | 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems 文件：853.99 Kbytes 页数：10 Pages | CREE 科锐 | CREE | |
CGHV35150-TB | 包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：TEST FIXTURE FOR CGHV35150F | WOLFSPEED | WOLFSPEED | |
RADIAL LEADED INDUCTORS 文件：670.06 Kbytes 页数：8 Pages | ABCO | ABCO | ||
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Description Wolfspeed’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is 文件：1.28659 Mbytes 页数：10 Pages | WOLFSPEED | WOLFSPEED | ||
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems 文件：853.99 Kbytes 页数：10 Pages | CREE 科锐 | CREE | ||
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems 文件：853.99 Kbytes 页数：10 Pages | CREE 科锐 | CREE |
产品属性
- 产品编号：
CGHV35150-TB
- 制造商：
Wolfspeed, Inc.
- 类别：
开发板，套件，编程器 > 射频评估和开发套件，开发板
- 包装：
散装
- 类型：
FET
- 频率：
2.9GHz ~ 3.5GHz
- 配套使用/相关产品：
CGHV35150
- 所含物品：
部分组装板 - 不包括主要 IC
- 描述：
TEST FIXTURE FOR CGHV35150F
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WOLFSPEED |
25+ |
射频元件 |
55 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Cree |
22+ |
NA |
2 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
CREE |
25+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
CREE |
1820+ |
NA |
145 |
原装正品 |
询价 | ||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
CREE |
22+ |
N/A |
9000 |
只做原装鄙视假货15118075546 |
询价 |
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- CGJ2B2C0G1H470J050BA
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