180 W, DC - 2.0 GHz, 50 V, GaN HEMT

Description Cree’s CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain

文件：713.32 Kbytes 页数：11 Pages

WOLFSPEED

180 W, DC - 2000 MHz, 50 V, GaN HEMT

文件：1.26511 Mbytes 页数：12 Pages

Cree

科锐

180 W, DC - 2000 MHz, 50 V, GaN HEMT

文件：1.26511 Mbytes 页数：12 Pages

Cree

科锐

180 W, DC - 2000 MHz, 50 V, GaN HEMT

文件：1.26511 Mbytes 页数：12 Pages

Cree

科锐

180 W; DC - 2 GHz; GaN HEMT

The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; high ·Input Unmatched\n·180 W (CW) Minimum Pout\n·250 W Typical Pout\n·24 dB Typical Small Signal Gain\n·28 V and 50 V Operation;

MACOM

Package：440206；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：180W, GAN HEMT, 50V, DC-4.0GHZ,

WOLFSPEED