50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

Description Wolfspeed's CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared t

文件：2.04703 Mbytes 页数：13 Pages

WOLFSPEED

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

文件：1.53645 Mbytes 页数：14 Pages

Cree

科锐

50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT

The CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arseni ·7.9 – 8.4 GHz Operation\n·80 W POUT typical\n·>13 dB Power Gain\n·33 % Typical Linear PAE\n·50 Ohm Internally Matched\n·<0.1 dB Power Droop;

MACOM

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

文件：1.53645 Mbytes 页数：14 Pages

Cree

科锐

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

文件：1.53645 Mbytes 页数：14 Pages

Cree

科锐

50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

7.9 – 8.4 GHz Operation80 W POUT typical>13 dB Power Gain33 % Typical Linear PAE50 Ohm Internally Matched<0.1 dB Power Droop • 7.9 – 8.4 GHz Operation\n• 80 W POUT typical\n• >13 dB Power Gain\n• 33 % Typical Linear PAE\n• 50 Ohm Internally Matched\n• <0.1 dB Power Droop;

MACOM