CGHV96050F1-AMP

50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT; • 7.9 – 8.4 GHz Operation\n• 80 W POUT typical\n• >13 dB Power Gain\n• 33 % Typical Linear PAE\n• 50 Ohm Internally Matched\n• <0.1 dB Power Droop\n;

7.9 – 8.4 GHz Operation80 W POUT typical>13 dB Power Gain33 % Typical Linear PAE50 Ohm Internally Matched<0.1 dB Power Droop

CGHV96050F1-AMP

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

CGHV96050F1

50W,7.9-9.6GHz,50-ohm,Input/OutputMatchedGaNHEMT

Description Wolfspeed'sCGHV96050F1isagalliumnitride(GaN)HighElectron MobilityTransistor(HEMT)onSiliconCarbide(SiC)substrates. ThisGaNInternallyMatched(IM)FEToffersexcellentpoweradded efficiencyincomparisontoothertechnologies.GaNhassuperior propertiescomparedt

CGHV96050F1

50W,7.9-9.6GHz,50-ohm,Input

CGHV96050F1-TB

50W,7.9-9.6GHz,50-ohm,Input