400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems

The CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on th ·3.3 – 3.8 GHz Operation\n·525 W Typical Output Power\n·11.5 dB Power Gain\n·55% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

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