400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes 页数：11 Pages

CREE

科锐

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes 页数：11 Pages

CREE

科锐

UltraCMOS Divide-by-4 Prescaler, 3??3.5 GHz

文件：2.38823 Mbytes 页数：13 Pages

PSEMI

UltraCMOS Divide-by-4 Prescaler, 3??3.5 GHz

文件：2.38823 Mbytes 页数：13 Pages

PSEMI