丝印：138；Package：SOT-363；MOSFET

Features - Low on-resistance. - Fast switching speed. - Low input capacitance.

文件：628.49 Kbytes 页数：7 Pages

COMCHIP

典琦

丝印：NZ；Package：SC-88；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

文件：920.29 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：NZt；Package：SOT23-6；Load Switch

Features VDS (V) = 60V RDS(ON)

文件：508.84 Kbytes 页数：7 Pages

UMW

友台半导体

60 V, 320 mA dual N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ AEC-

文件：374.19 Kbytes 页数：16 Pages

恩XP

丝印：NZt；Package：SOT23-6；MOSFET

Features RDS(ON)

文件：635.39 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：SS；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98353 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：XJ；Package：SC-70；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology A

文件：904.93 Kbytes 页数：16 Pages

NEXPERIA

安世

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138Q is suitable for automotive applications requiring

文件：592.33 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：K38；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138Q is suitable for automotive applications requiring

文件：592.33 Kbytes 页数：6 Pages

DIODES

美台半导体