Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

文件：79.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Make

文件：117.05 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes

文件：79.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：J1M；Package：SOT-23；MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

文件：265.56 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：J1M；Package：SOT-23；MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

文件：265.56 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：SKs；Package：SOT-23；SIPMOS Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21

文件：230.2 Kbytes 页数：9 Pages

INFINEON

英飞凌

SIPMOS짰 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21

文件：463.57 Kbytes 页数：9 Pages

INFINEON

英飞凌

60 V, 360 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFETtechn

文件：181.48 Kbytes 页数：16 Pages

恩XP

丝印：AN；Package：TO-236AB；60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-

文件：742.21 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：J2x；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.96489 Mbytes 页数：5 Pages

TECHPUBLIC

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