丝印：LG；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET techno

文件：1.60573 Mbytes 页数：17 Pages

NEXPERIA

安世

N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

文件：2.00525 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：SS；Package：SOT-323；nullN-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98563 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

60 V, 320 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

文件：864.87 Kbytes 页数：16 Pages

PHI

PHI

丝印：AD；Package：SC-70；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

文件：1.58549 Mbytes 页数：16 Pages

NEXPERIA

安世

60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

文件：1.58549 Mbytes 页数：16 Pages

NEXPERIA

安世

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

文件：381.58 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

丝印：SS；Package：SOT-23；Plastic-Encapsulate MOSFETS

APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible -CAR for automotive and other

文件：1.75106 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

文件：381.85 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

丝印：SS；Package：SOT-363；Dual N-Channel MOSFET

Feature  High density cell design for extremely low RDS(on)  Rugged and Relaible Application  Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays

文件：513.65 Kbytes 页数：4 Pages

GWSEMI

唯圣电子