丝印：LG；Package：SMB；600 Watt Peak Power Zener Transient Voltage Suppressors

The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-e

文件：69.48 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：LG；Package：SOT-23；Low Noise, Complementary to 2SA1162

FEATURES Low noise： NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.

文件：2.45715 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：LG；Package：SOT-23；Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

文件：2.23809 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：LG；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件：3.35089 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：LG；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET techno

文件：1.60573 Mbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LG；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/

文件：2.31369 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：LG；Package：SOT-323；NPN Transistors

■ Features ● Excellent hFE Linearity ● Low Noise ● Complementary to KTA2014

文件：1.46798 Mbytes 页数：3 Pages

KEXIN

科信电子

丝印：LG；Package：SOT-353；NPN Transistors

■ Features ● Excellent temperature response between these 2 transistor. ● High pairing property in hFE. ● The follwing characteristics are common for Q1, Q2.

文件：1.05876 Mbytes 页数：3 Pages

KEXIN

科信电子

丝印：LG；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 600W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.2 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：LG；Package：CFP3；150 V, 1 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：258.579 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司