丝印：SS；Package：SOT-23；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

文件：898.67 Kbytes 页数：5 Pages

SY

顺烨电子

N-Channel Enhancement Mode MOSFET

Feature ● 50V/0.2A, RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications. ● SOT-23 for Surf

文件：295.08 Kbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● Low On-Resistance ● Low Gate Threshold Voltage ● Fast Switching Speed ● Low Input / Output Leakage

文件：359.79 Kbytes 页数：2 Pages

HMSEMI

华之美半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package. Applications Low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applicatio

文件：861.68 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.7322 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • 50 V/0.2 A, RDS(ON) = 3.5Ω @ VGS = 5 V. Id = 0.2 A RDS(ON) = 10Ω @ VGS = 2.75V. Id = 0.2 A • Super High dense cell design for extremely low RDS(ON) • Reliable and Rugged. • Low Threshold Voltage (0.5V - 1.5V) Make it Ideal for Low Voltage Applications. • SOT-23 for Surface

文件：623.44 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package

文件：371.04 Kbytes 页数：4 Pages

HOTTECH

合科泰

SOT-23 Plastic-Encapsulate MOSFET

N -Channel MOSFET Features ● High density cell design for extremely low RDS(on) ● Rugged and Relaible Applications ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

文件：2.40498 Mbytes 页数：5 Pages

HDSEMI

海德半导体

Direct Logic-Level Interface: TTL/CMOS

FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

文件：586.2 Kbytes 页数：4 Pages

BWTECH

N-Channel MOSFET

Features VDS (V) = 50V ID = 200 mA (VGS = 10V) RDS(ON)

文件：1.10935 Mbytes 页数：4 Pages

EVVOSEMI

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