N-Channel Enhancement Mode Field Effect Transistor

Features • 50V, 0.22 A, RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for low RDS(ON). • Rugged and Reliable. • SOT-23 package

文件：481.32 Kbytes 页数：5 Pages

CET

华瑞

丝印：SS；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

文件：139.53 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel MOSFET

■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) ● RDS(ON)

文件：828.61 Kbytes 页数：3 Pages

KEXIN

科信电子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

文件：289.27 Kbytes 页数：7 Pages

NCEPOWER

新洁能

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated System

文件：114.76 Kbytes 页数：5 Pages

PANJIT

強茂

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：138.1 Kbytes 页数：8 Pages

SIEMENS

西门子

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

文件：414.9 Kbytes 页数：8 Pages

SILIKRON

新硅能微电子

丝印：SS；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 50V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：609.07 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：SS；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

文件：1.27011 Mbytes 页数：5 Pages

DGNJDZ

南晶电子