N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: • Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage Applications: • N-channel Enhancement Mode Effect Transistor • Switching Application Description N-Channel Logic Level Enhancement Mode Field Effect

文件：894.99 Kbytes 页数：4 Pages

MULTICOMP

易络盟

N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible AEC-Q101qualified APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：747.52 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

N-Channel MOSFET

FEATURES  Epoxy meets UL 94 V-0 flammability rating  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  ESD Protected 2KV HBM APPLICATIONS  Direct Logic-Level Interface: TTL/CMOS  Load Switch for Portable Devices  DC/DC Converter

文件：1.13532 Mbytes 页数：5 Pages

HUIXIN

慧芯电子

N-Channel MOSFET

Application « Reverse Battery protection i © Load switch « Power management « Motor Control

文件：2.01074 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：QL；Package：SOT8015；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

文件：302.68 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：D4；Package：SOT1268；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

文件：319.24 Kbytes 页数：15 Pages

NEXPERIA

安世

N Channel MOSFET

Features •High density cell design for extremely low RDS(on) •Rugged and Reliable Application •Direct Logic-Level Interface: TTL/CMOS •Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc. •Battery Operated Systems •Solid-State Relays

文件：2.36138 Mbytes 页数：6 Pages

MULTICOMP

易络盟

60 V, 360 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits - Logic-level compatible - Very fast switching - Trench MOSFETtechn

文件：865.01 Kbytes 页数：16 Pages

恩XP

丝印：SB；Package：TO-236AB；60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ES

文件：1.58605 Mbytes 页数：16 Pages

NEXPERIA

安世

丝印：J2x；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.96664 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子