丝印：D4；Package：SOT1268；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

文件：319.24 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世

60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ES

文件：1.58605 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes 页数：2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：76.51 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：418.49 Kbytes 页数：1 Pages

KEYSTONE

Keystone Electronics Corp.