N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. ■ FEATURES

文件：157.64 Kbytes 页数：3 Pages

UTC

友顺

丝印：S138；Package：SOT-23；N-Channel MOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A ● RDS(ON)

文件：832.84 Kbytes 页数：7 Pages

E-CMOS

飞虹高科

MOSFET

Features - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Fast switching speed. - Low input/output leakage.

文件：477.78 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：SS；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：269.14 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：J2x；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.96629 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：509.39 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：38K；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：509.39 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：38K；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：509.39 Kbytes 页数：7 Pages

DIODES

美台半导体

Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Make

文件：117.05 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：J1M；Package：SOT-23；MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

文件：265.56 Kbytes 页数：9 Pages

ONSEMI

安森美半导体