丝印：SS；Package：SOT-523；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：298.62 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • BVDSS > 50V • RDS(on) ≤ 3.5Ω @ VGS= 5V • Maximum continuous drain current ID = 200mA • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

文件：104.43 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-323 Package • Marking Code: SS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

文件：366.79 Kbytes 页数：4 Pages

MCC

丝印：SS；Package：SOT-323；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：237.18 Kbytes 页数：6 Pages

RECTRON

丽正国际

Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. Application Switching circuits Low-side loadswitch Relay driver

文件：4.61783 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：J1；Package：SOT-323；N-Channel POW

Description: Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features: Simple Drive Requirement Small Package Outline

文件：563.74 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：138；Package：SOT-323；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged,reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as sm

文件：217.99 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

SIPMOS Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant

文件：196.07 Kbytes 页数：9 Pages

INFINEON

英飞凌

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

文件：90.54 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead Free/RoHS Compliant (Note 4) • Green Device (Note 5 and 6)

文件：150.95 Kbytes 页数：4 Pages

DIODES

美台半导体