BSS138T

丝印：SS；Package：SOT-523；Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays

BSS138TA

N-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits •BVDSS>50V •RDS(on)≤3.5Ω@VGS=5V •MaximumcontinuousdraincurrentID=200mA •“LeadFree”,RoHSCompliant(Note1) •HalogenandAntimonyFree.GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability

BSS138TA-79

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH SOT23

BSS138W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

BSS138W

SIPMOSSmall-Signal-Transistor

Features •N-channel •Enhancementmode •Logiclevel •dv/dtrated •Pb-freelead-plating;RoHScompliant

BSS138W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

BSS138W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5and6)

BSS138W

N-ChannelPOWERMOSFET

BSS138W

SIPMOSSmall-Signal-Transistor

BSS138W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-Channelenhancementmodefieldeffecttransistor.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurrentapplicationssuchassm