Advanced MOSFET process technology

Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v

文件：469.34 Kbytes 页数：6 Pages

SILIKRON

新硅能微电子

丝印：SS；Package：SOT-323；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

文件：1.62694 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：SS；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98104 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

POWER MOSFET N-CHANNEL 200mA, 50V

DESCRIPTION Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The BSS138W is available in SC 70 Package Type FEATURES  Low T hreshold Voltage (V GS(th) th): 0

文件：546.2 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

N-Channel Enhancement Mode MOSFET

FEATURE - High density cell design for extremely low RDS(on) - Rugged and Relaible APPLICATION -Direct Logic-Level Interface: TTL/CMOS -Drivers: Relays, Solenoids, Lamps, Hammers,Display, -Memories, Transistors, etc. -Battery Operated Systems -Solid-State Relays

文件：1.01528 Mbytes 页数：5 Pages

HUIXIN

慧芯电子

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead Free/RoHS Compliant (Note 4) • Green Device (Note 5 and 6)

文件：150.95 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

文件：90.54 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 20

文件：1.01479 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：VDA；Package：SOT-323；Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. 6) AEC-Q101 Qualified. Application Switching circuits Low-side loadswitch Relay driver

文件：4.79455 Mbytes 页数：14 Pages

ROHM

罗姆

Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. 6) AEC-Q101 Qualified. Application Switching circuits Low-side loadswitch Relay driver

文件：4.79455 Mbytes 页数：14 Pages

ROHM

罗姆