N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

文件：90.54 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 20

文件：1.01479 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：115.2 Kbytes 页数：6 Pages

DIODES

美台半导体

BSS138W-7-F - 场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3

Multicomp

易络盟