N-Channel MOSFET

FEATURES  Epoxy meets UL 94 V-0 flammability rating  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  ESD Protected 2KV HBM APPLICATIONS  Direct Logic-Level Interface: TTL/CMOS  Load Switch for Portable Devices  DC/DC Converter

文件：1.13532 Mbytes 页数：5 Pages

HUIXIN

慧芯电子

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

文件：64.41 Kbytes 页数：8 Pages

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

文件：64.41 Kbytes 页数：8 Pages

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

文件：108.73 Kbytes 页数：12 Pages

NEC

瑞萨