丝印：NZt；Package：SOT23-6；Load Switch

Features VDS (V) = 60V RDS(ON)

文件：508.84 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：NZt；Package：SOT23-6；MOSFET

Features RDS(ON)

文件：635.39 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：NZT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

NPN Power Amplifier

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4Q.

文件：153.2 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP Current Driver Transistor

PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. See NZT751 for characteristics.

文件：58.55 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP Power Amplifier

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

文件：141.61 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Low Saturation Transistor

Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

文件：200.06 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Low Saturation Transistor

Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

文件：200.06 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Darlington Transistor

NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06.

文件：38.95 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Current Driver Transistor

NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.

文件：113.09 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司