丝印：XJ；Package：SC-70；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology A

文件：904.93 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：SS；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98353 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

60 V, 320 mA N-channel Trench MOSFET

文件：358.87 Kbytes 页数：16 Pages

PHI

PHI

60 V, 320 mA N-channel Trench MOSFET

文件：358.87 Kbytes 页数：16 Pages

PHI

PHI

60 V, 360 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• AEC-Q101 qualified;

Nexperia

安世