N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

文件：92.3 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: • Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage Applications: • N-channel Enhancement Mode Effect Transistor • Switching Application Description N-Channel Logic Level Enhancement Mode Field Effect

文件：894.99 Kbytes 页数：4 Pages

MULTICOMP

易络盟

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

文件：139.53 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible AEC-Q101qualified APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：747.52 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

N-Channel MOSFET

FEATURES  Epoxy meets UL 94 V-0 flammability rating  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  ESD Protected 2KV HBM APPLICATIONS  Direct Logic-Level Interface: TTL/CMOS  Load Switch for Portable Devices  DC/DC Converter

文件：1.13532 Mbytes 页数：5 Pages

HUIXIN

慧芯电子

N-Channel MOSFET

Application « Reverse Battery protection i © Load switch « Power management « Motor Control

文件：2.01074 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：QL；Package：SOT8015；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

文件：302.68 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：D4；Package：SOT1268；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

文件：319.24 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：SB；Package：TO-236AB；60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ES

文件：1.58605 Mbytes 页数：16 Pages

NEXPERIA

安世