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BSS138-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBSS138Qissuitableforautomotive

DIODESDiodes Incorporated

达尔科技

DIODES

BSS138-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

BSS138-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES

BSS138-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODESDiodes Incorporated

达尔科技

DIODES

详细参数

  • 型号:

    BSS138-7

  • 功能描述:

    MOSFET 60V 360mW

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
DIODES
2008++
SOT-23
6200
新进库存/原装
询价
DIODES
13+
SOT23
3000
特价热销现货库存
询价
DIODES
16+
SOT23
66540
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
DIODES
16+
SOT23
3000
原装现货假一罚十
询价
DIODES
23+
NA
5000
全新原装假一赔十
询价
23+
N/A
35800
正品授权货源可靠
询价
DIODES/美台
1833+
SOT23
45382
原装现货!天天特价!随时可以货!
询价
DIODES
20+
SOT23
32970
原装优势主营型号-可开原型号增税票
询价
DIODESINC.
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
DIODESINC
21+
35200
一级代理/放心采购
询价
更多BSS138-7供应商 更新时间2024-4-27 16:30:00