N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

文件：92.3 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: • Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage Applications: • N-channel Enhancement Mode Effect Transistor • Switching Application Description N-Channel Logic Level Enhancement Mode Field Effect

文件：894.99 Kbytes 页数：4 Pages

MULTICOMP

易络盟

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

文件：139.53 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：485.65 Kbytes 页数：5 Pages

DIODES

美台半导体

BSS138-7-F - 场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3

Multicomp

易络盟