N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

文件：395.58 Kbytes 页数：6 Pages

TSC

台湾半导体

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State R

文件：1.16708 Mbytes 页数：5 Pages

JIANGSU

长电科技

N-Channel MOSFET

■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) ● RDS(ON)

文件：828.61 Kbytes 页数：3 Pages

KEXIN

科信电子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

文件：289.27 Kbytes 页数：7 Pages

NCEPOWER

新洁能

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated System

文件：114.76 Kbytes 页数：5 Pages

PANJIT

強茂

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：138.1 Kbytes 页数：8 Pages

SIEMENS

西门子

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package. Applications Low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applicatio

文件：861.68 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.7322 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • 50 V/0.2 A, RDS(ON) = 3.5Ω @ VGS = 5 V. Id = 0.2 A RDS(ON) = 10Ω @ VGS = 2.75V. Id = 0.2 A • Super High dense cell design for extremely low RDS(ON) • Reliable and Rugged. • Low Threshold Voltage (0.5V - 1.5V) Make it Ideal for Low Voltage Applications. • SOT-23 for Surface

文件：623.44 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD protected 2KV HBM zApplications Interfacing, switching (50V, 100mA)

文件：2.85611 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体