N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

文件：67.49 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-c

文件：216.64 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4

文件：152.36 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4

文件：152.36 Kbytes 页数：4 Pages

DIODES

美台半导体

Plastic-Encapsulate MOSFET

Features  TrenchFET Power MOSFET  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.01769 Mbytes 页数：3 Pages

HUIXIN

慧芯电子

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe

文件：419.64 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe

文件：419.64 Kbytes 页数：5 Pages

DIODES

美台半导体

SIPMOS Small-Signal Transistor (N channel Enhancement mode)

• N channel • Enhancement mode •VGS(th)= 1.5 ...2.5 V

文件：78.7 Kbytes 页数：7 Pages

SIEMENS

西门子

SIPMOS Small-Signal Transistor (N channel Enhancement mode)

• N channel • Enhancement mode •VGS(th)= 1.5 ...2.5 V

文件：78.12 Kbytes 页数：7 Pages

SIEMENS

西门子

SIPMOS짰 Small-Signal-Transistor

Features • N-channel • Depletion mode • dv /dt rated • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

文件：236.82 Kbytes 页数：9 Pages

INFINEON

英飞凌