N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

文件：67.49 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：1.73104 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

文件：447.77 Kbytes 页数：9 Pages

CYSTEKEC

全宇昕科技

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

文件：447.77 Kbytes 页数：9 Pages

CYSTEKEC

全宇昕科技

丝印：B123KX；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 100 V,ID = 0.17A RDS(ON)

文件：237.94 Kbytes 页数：6 Pages

NCEPOWER

新洁能

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K12；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K12；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 页数：7 Pages

DIODES

美台半导体

N-Channel Enhancement Mode MOSFET

Features • High ESD • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

文件：448.72 Kbytes 页数：9 Pages

CYSTEKEC

全宇昕科技