N Channel MOSFET

N Channel MOSFET FEATURE ● Surface Mount Package ● High Density Cell Design for Extremely Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable APPLICATION ● Small Servo Motor Controls ● Power MOSFET Gate Drivers ● Switching Application

文件：1.00704 Mbytes 页数：5 Pages

JIANGSU

长电科技

丝印：SA；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

FEATURE ● Pb-Free Package is available.

文件：450.15 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：123；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：1.54835 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：SA；Package：SOT-23；N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

文件：671.74 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features High density cell design for extremely low RDS(ON). Applications This device is suitable for use as a load switch or in PWM applications.

文件：711.86 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Tramsistor

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating

文件：699.02 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-channel TrenchMOS transistor Logic level FET

FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Relay driver • High-spe

文件：143.93 Kbytes 页数：5 Pages

NEXPERIA

安世