丝印：123；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：1.54835 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：123；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：2.06458 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：123；Package：UMT3；DTC143Z series

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：566.34 Kbytes 页数：11 Pages

ROHM

罗姆

丝印：123；Package：UMT3；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：566.34 Kbytes 页数：11 Pages

ROHM

罗姆

丝印：123；Package：UMT3；NPN 100mA 50V Digital Transistors

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：566.34 Kbytes 页数：11 Pages

ROHM

罗姆

丝印：123；Package：UMT3；NPN 100mA 50V Digital Transistors

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：3.77855 Mbytes 页数：12 Pages

ROHM

罗姆

丝印：123；Package：UMT3；100mA / 50V Digital transistors (with built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advanta

文件：79.95 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：123；Package：UMT3F；100mA / 50V Digital transistors

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：85.11 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：123；Package：UMT3F；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：566.34 Kbytes 页数：11 Pages

ROHM

罗姆

丝印：123；Package：UMT3F；DTC143Z series

Features 1) Built-in bias resistors .R1 = 4.7kΩ, R2 = 47kΩ. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit

文件：566.34 Kbytes 页数：11 Pages

ROHM

罗姆