丝印：SHs；Package：PG-SOT23；SIPMOS® Small-Signal-Transistor

Features • N-channel • Depletion mode • dv/dt rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.06799 Mbytes 页数：10 Pages

INFINEON

英飞凌

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

文件：230.96 Kbytes 页数：4 Pages

UTC

友顺

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

文件：366.45 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 页数：6 Pages

RECTRON

丽正国际

SIPMOS짰 Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • n-channel • enhancement mode • Logic level • dv /dt rated • Pb-free lead plating, RoHS compliant

文件：271.43 Kbytes 页数：9 Pages

INFINEON

英飞凌

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

文件：230.96 Kbytes 页数：4 Pages

UTC

友顺

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

文件：230.96 Kbytes 页数：4 Pages

UTC

友顺

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

文件：366.45 Kbytes 页数：6 Pages

DIODES

美台半导体

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

文件：366.45 Kbytes 页数：6 Pages

DIODES

美台半导体

N-Channel Depletion-Mode MOSFET Transistors

[Siliconix] Features ● High Breakdown Voltage: 260 V ● Normally “On” Low rDS Switch: 3.5 Ω ● Low Input and Output Leakage ● Low-Power Drive Requirement ● Low Input Capacitance Benefits ● Full-Voltage Operation ● Low Offset Voltage ● Low Error Voltage ● Easily Driven Without Buffer ● Hi

文件：57.57 Kbytes 页数：4 Pages

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