BSS123W中文资料仙童半导体数据手册PDF规格书

描述 Description

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.

特性 Features

• 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V

• High Density Cell Design for Low RDS(ON)

• Rugged and Reliable

• Ultra Small Surface Mount Package

• Very Low Capacitance

• Fast Switching Speed

• Lead Free / RoHS Compliant