N Channel MOSFET

Features •High density cell design for extremely low RDS(on) •Rugged and Reliable Application •Direct Logic-Level Interface: TTL/CMOS •Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc. •Battery Operated Systems •Solid-State Relays

文件：2.36138 Mbytes 页数：6 Pages

MULTICOMP

易络盟

60 V, 360 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits - Logic-level compatible - Very fast switching - Trench MOSFETtechn

文件：865.01 Kbytes 页数：16 Pages

恩XP

丝印：J2x；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.96664 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

文件：2.00525 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：LG；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET techno

文件：1.60573 Mbytes 页数：17 Pages

NEXPERIA

安世

丝印：AD；Package：SC-70；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

文件：1.58549 Mbytes 页数：16 Pages

NEXPERIA

安世

60 V, 320 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

文件：864.87 Kbytes 页数：16 Pages

PHI

PHI

丝印：SS；Package：SOT-323；nullN-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98563 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

文件：1.58549 Mbytes 页数：16 Pages

NEXPERIA

安世

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

文件：381.58 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子