PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits.

文件：41.28 Kbytes 页数：8 Pages

PHI

PHI

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4

文件：33.61 Kbytes 页数：1 Pages

ZETEX

丝印：G3；Package：SOT1061D；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface- Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF). 2. Features and benefits • High collector current capability IC and ICM • Red

文件：248.96 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：G3；Package：SOT1061D；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface- Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF). 2. Features and benefits • High collector current capability IC and ICM • Red

文件：250.29 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Qualified

文件：181.31 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

文件：293.75 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

文件：293.75 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BSR30; BSR31 and BSR33. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Thick and thin-film circuits • Telephony and general industrial applications.

文件：125.8 Kbytes 页数：7 Pages

恩XP

丝印：AR1；Package：SOT-89；NPN medium power Transistors

FEATURES ● High current(max.1A). ● Low voltage(max.80V). ● Thick and thin-film circuits. ● Telephony and general industrial applications. ● NPN complements:BSR30,BSR31 and BSR33.

文件：137.98 Kbytes 页数：3 Pages

BILIN

银河微电

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：16.79 Kbytes 页数：1 Pages

ZETEX