TRANSISTOR (NPN)

FEATURES • Low Voltage • High Current • Complement to BSR33 APPLICATIONS • Thick and Thin-Film Circuits • Telephony and General Industrial Applications

文件：295.83 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Voltage ● High Current ● Complement to BSR33 APPLICATIONS ● Thick and Thin-Film Circuits ● Telephony and General Industrial Applications

文件：1.17511 Mbytes 页数：3 Pages

JIANGSU

长电科技

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • High current(max.1A) • Low voltage(max.80V) • Thick and thin-film circuits. • Telephony and general industrial applications. • NPN complements:BSR30, BSR31 and BSR33.

文件：371.92 Kbytes 页数：2 Pages

HOTTECH

合科泰

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPES – BSR43 - BSR33 BSR41 - BSR31 PARTMARKING DETAIL – BSR43 - AR4 BSR41 - AR2

文件：16.67 Kbytes 页数：1 Pages

ZETEX

丝印：AR4；Package：SOT89；80 V, 1 A NPN medium power transistor

1. General description NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q. 2. Features and benefits • High current (max. 1 A) • Low voltage (max. 80 V) • Qualified according to AEC-Q101 and recommended for us

文件：188.1 Kbytes 页数：8 Pages

NEXPERIA

安世

NPN Darlington Transistor

NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06.

文件：27.43 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BSR62. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.

文件：47.23 Kbytes 页数：7 Pages

PHI

PHI

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BSR62. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.

文件：118.67 Kbytes 页数：7 Pages

恩XP

NPN Darlington transistor

FEATURES • High current (max. 1A) • Low voltage (max. 80 V) • Integrated diode andresistor. APPLICATIONS • Industrial high gain amplification.

文件：90 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP