BSR43

Marking：AR4；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES LowVoltage HighCurrent ComplementtoBSR33 AAPLICATIONS ThickandThin-FilmCircuits TelephonyandGeneralIndustrialApplications

BSR43

Marking：AR4；Package：SOT-89；NPN medium power Transistors

FEATURES ●Highcurrent(max.1A). ●Lowvoltage(max.80V). ●Thickandthin-filmcircuits. ●Telephonyandgeneralindustrialapplications. ●NPNcomplements:BSR30,BSR31andBSR33.

BSR43

Marking：AR4；Package：SOT89；80 V, 1 A NPN medium power transistor

1.Generaldescription NPNgeneral-purposetransistorinamediumpowerSOT89(SC-62)Surface-MountedDevice (SMD)plasticpackage.PNPcomplement:BSR33. 2.Featuresandbenefits •Highcurrent(max.1A) •Lowvoltage(max.80V) 3.Applications •Linearvoltageregulators •Low-side

BSR43-Q

Marking：AR4；Package：SOT89；80 V, 1 A NPN medium power transistor

1.Generaldescription NPNgeneral-purposetransistorinamediumpowerSOT89(SC-62)Surface-MountedDevice (SMD)plasticpackage.PNPcomplement:BSR33-Q. 2.Featuresandbenefits •Highcurrent(max.1A) •Lowvoltage(max.80V) •QualifiedaccordingtoAEC-Q101andrecommendedforus

DMN2024UVT-13

Marking：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, whichmakesitidealforhigh-efficiencypowermanagement applications. Applications Backlighting DC-DCConverters PowerManagementFunctions F

DMN2024UVT-7

Marking：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, whichmakesitidealforhigh-efficiencypowermanagement applications. Applications Backlighting DC-DCConverters PowerManagementFunctions F

DMN2024UVTQ-13

Marking：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UVTQissuitableforautomotiveapplication

DMN2024UVTQ-7

Marking：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UVTQissuitableforautomotiveapplication

HEBSR43

Marking：AR4；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

TUAR4D

Marking：AR4D；Package：TO-277A；4A, 200V - 1000V Fast Recovery Surface Mount Rectifier

FEATURES Glasspassivatedchipjunction Highsurgecurrentcapability Wettableflank Moisturesensitivitylevel:level1,perJ-STD-020 RoHSCompliant Halogen-free APPLICATIONS DCtoDCconverter Switchingmodeconvertersandinverters Generalpurpose