丝印：AR4；Package：SOT-89；NPN medium power Transistors

FEATURES ● High current(max.1A). ● Low voltage(max.80V). ● Thick and thin-film circuits. ● Telephony and general industrial applications. ● NPN complements:BSR30,BSR31 and BSR33.

文件：137.98 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：AR4；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current Complement to BSR33 AAPLICATIONS Thick and Thin-Film Circuits Telephony and General Industrial Applications

文件：1.44483 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：AR4；Package：SOT89；80 V, 1 A NPN medium power transistor

1. General description NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33. 2. Features and benefits • High current (max. 1 A) • Low voltage (max. 80 V) 3. Applications • Linear voltage regulators • Low-side

文件：219.74 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：AR4；Package：SOT89；80 V, 1 A NPN medium power transistor

1. General description NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q. 2. Features and benefits • High current (max. 1 A) • Low voltage (max. 80 V) • Qualified according to AEC-Q101 and recommended for us

文件：188.1 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

文件：535.5 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

文件：535.5 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

文件：506.12 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AR4；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

文件：506.12 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AR4；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

文件：243.56 Kbytes 页数：3 Pages

HOTTECH

合科泰

丝印：AR4D；Package：TO-277A；4A, 200V - 1000V Fast Recovery Surface Mount Rectifier

FEATURES Glass passivated chip junction High surge current capability Wettable flank Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS DC to DC converter Switching mode converters and inverters General purpose

文件：312.7 Kbytes 页数：5 Pages

TSC

台湾半导体