N-Channel Low-Frequency Low-Noise Amplifier

N-Channel Low-Frequency Low-Noise Amplifier • This device is designed for low-power chopper or switching application sourced from process 51

文件：43.64 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

N-channel FETs

DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service.

文件：37.34 Kbytes 页数：6 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

JFET PRO ELECTRON SERIES

文件：120.95 Kbytes 页数：2 Pages

NSC

国半

N-channel FETs

Overview Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in aplastic microminiature envelope designed for application in thick and thin-film circuits. Thetransistors are intended for low-power, chopper or switching applications in industrialservice. Interchangeable drain and source connections\nSmall package;

恩XP

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - JFET 描述：JFET N-CH 40V 250MW SOT23

ONSEMI

安森美半导体