丝印：BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Qualified

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NEXPERIA

安世

80 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.\n NPN complement: BSR43-Q • High current\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

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原厂

NEXPERIA

安世

上传：深圳市世正电子有限公司

SOT-23

Infineon

英飞凌

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Reel

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上传：北京京北通宇电子元件有限公司