BSR33

Marking：BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1.Generaldescription PNPmediumpowertransistorinaSOT89Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:BSR43 2.Featuresandbenefits •Highcurrent •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •AEC-Q101qua

BSR33

Marking：BR4；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES LowVoltage HighCurrent ComplementtoBSR43 AAPLICATIONS MediumPowerTransistor

BSR33-Q

Marking：BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1.Generaldescription PNPmediumpowertransistorinaSOT89Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:BSR43-Q 2.Featuresandbenefits •Highcurrent •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •Qualified

BSR33QTA

Marking：BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features BVCEO>-80V IC=-1AHighContinuousCurrent LowsaturationvoltageVCE(sat)

BSR33TA

Marking：BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features BVCEO>-80V IC=-1AHighContinuousCurrent LowsaturationvoltageVCE(sat)

SMA6J14CA

Marking：BR4；Package：SMA；600 W Transient Voltage Suppressor

1.Generaldescription 600Wuni-andbi-directionalTransientVoltageSuppressor(TVS)inaSMASurface-Mounted Device(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=600W •Reversestandoff

HEBSR33

Marking：BR4；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

RBR40NS40A

Marking：BR40NS40A；Package：TO-263S；Schottky Barrier Diode

●Features Highreliability Powermoldtype Cathodecommondualtype LowVF ●Application Switchingpowersupply

STTH1R04UY

Marking：BR4Y；Package：SMB；Automotive ultrafast recovery diode