BR6

型号：DMN2053UVT-13；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications Backlighting DC-DCConverters PowerManagementFunctio

BR6

型号：DMN2053UVT-7；Package：TSOT26；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications Backlighting DC-DCConverters PowerManagementFunctio

BR6

型号：DMN2053UVTQ-13；Package：TSOT26；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UVTQissuitableforautomotiveapplications requiringspecific

BR6

型号：DMN2053UVTQ-7；Package：TSOT26；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UVTQissuitableforautomotiveapplications requiringspecific

BR6

型号：SMA6J16CA；Package：SMA；600 W Transient Voltage Suppressor

1.Generaldescription 600Wuni-andbi-directionalTransientVoltageSuppressor(TVS)inaSMASurface-Mounted Device(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=600W •Reversestandoff