N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ Battery management ■ High speed switch ■

文件：318.39 Kbytes 页数：13 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

文件：265.23 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicat

文件：418.83 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ Battery management ■ High speed switch ■

文件：206.38 Kbytes 页数：2 Pages

TYSEMI

台湾TY半导体

丝印：A29T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

文件：2.30114 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世

N-channel enhancement mode field-effect transistor

恩XP