首页 >BFE193超小型管>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
LowNoiseFigure DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconNPNPlanarRFTransistor Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlargesignalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlargesignalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlargesignalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor* •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,F=1dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=7.5GHz F=1.3dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
12000 |
询价 | ||||
PHILIPS |
23+ |
SOT-143 |
31000 |
全新原装现货 |
询价 | ||
INFINEON |
23+ |
SOT-143 |
63000 |
原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
22+ |
SOT-143 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
INFINEON |
23+ |
SOT-143 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
SOT-143 |
50000 |
原装正品 支持实单 |
询价 | ||
INFINEON |
23+ |
SOT-143 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
NXP/恩智浦 |
23+ |
SOT143 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
INFINEON |
23+ |
SOT-143 |
7000 |
询价 | |||
NXP |
21+ |
标准封装 |
150000 |
进口原装,订货渠道! |
询价 |
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