NPN 9 GHz wideband transistor

DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MA

文件：101.87 Kbytes 页数：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure APPLICATIONS • Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.).

文件：207.3 Kbytes 页数：7 Pages

ISC

无锡固电

NPN 9 GHz宽频带晶体管

BFR540是NPN硅平面外延晶体管，采用SOT23塑料封装。 金属化镀金确保极佳的可靠性\n高功率增益\n高传送频率\n低噪声;

恩XP

高频三极管

MXTronics

时代民芯

NPN 9 GHz wideband transistor

文件：116.96 Kbytes 页数：16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件：116.96 Kbytes 页数：16 Pages

JMNIC

锦美电子