NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition fre

文件：113.71 Kbytes 页数：11 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 6 V, IC = 5 mA, f = 900 MHz ·High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 6 V, IC = 20 mA, f = 1 GHz APPLICATIONS ·Designed for wideband applications such as satellite TV tuners,cellular phones, cordless p

文件：195.46 Kbytes 页数：7 Pages

ISC

无锡固电

NPN Silicon RF Transistor

Description Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. With high power gain, low noise figure, large dynamic range and ideal current characteristics, the use of SOT -323 ultra compact chip package, mainly used in the VHF, UHF and CATV high frequency w

文件：530.28 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：N2；Package：SOT-323；NPN Transistor

FEATURES ♦ Collector Current Capability IC=70mA ♦ Collector Emitter Voltage VCEO=15V ♦ High power gain ♦ Low noise figure ♦ High transition frequency MECHANICAL DATA ♦ Case: SOT-323(SC-70-3)

文件：847.88 Kbytes 页数：7 Pages

YFWDIODE

佑风微

三极管

AK

安捷利

NPN 高频低噪声晶体管

RM TECHNOLOGY

瑞美科

高频三极管

MXTronics

时代民芯

NPN 9 GHz wideband transistor

文件：95.12 Kbytes 页数：11 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件：95.12 Kbytes 页数：11 Pages

JMNIC

锦美电子