型号：1PS66SB17；Package：SOT666；4 V, 30 mA low capacitance Schottky barrier diode

1. General description Triple isolated planar low capacitance Schottky barrier diode encapsulated in a SOT666 ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 3 isolated diodes • Very low diode capacitance • Very low forward voltage • Ultra sm

文件：180.92 Kbytes 页数：7 Pages

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安世安世半导体(中国)有限公司

型号：AH3712-SA-7；Package：SOT23；HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features  Bipolar Latch  AH3712/AH3712A: South Pole On, North Pole Off  AH3712B: South Pole Off, North Pole On  3.0V to 27V Operating Voltage Range  High Sensitivity: BOP and BRP of ±25G Typical  Resistant to physical stress  Single Open-Drain (AH3712, AH3712B) or Internal Pull-Up R

文件：1.04525 Mbytes 页数：16 Pages

美台半导体

型号：BAS40LS；Package：DFN1006BD-2；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface- Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance

文件：212.27 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

型号：BAS40LS-Q；Package：DFN1006BD-2；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface- Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance

文件：213.9 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

型号：BC807DS；Package：SOT-26；PNP general purpose double transistor

DESCRIPTION PNP transistor pair in a SOT457 (SC-74) plastic package. FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Push-pull amplifiers • Multi-ph

文件：130.02 Kbytes 页数：7 Pages

恩XP

型号：BC807DS；Package：SOT-26；PNP general purpose double transistor

FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Push-pull amplifiers • Multi-phase stepper motor drivers. DESCRIPTION PNP transi

文件：60.5 Kbytes 页数：8 Pages

PHI

型号：BC807DS；Package：SC-74；PNP/PNP general purpose double transistors

Features and benefits • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：201.56 Kbytes 页数：8 Pages

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安世安世半导体(中国)有限公司

型号：BC807DS-Q；Package：TSOP6；PNP/PNP general purpose double transistors

1. General description PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. NPN/NPN complement: BC817DS-Q NPN/PNP complement: BC817DPN-Q 2. Features and benefits • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and reco

文件：203.84 Kbytes 页数：8 Pages

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安世安世半导体(中国)有限公司

型号：BFS520；Package：SOT-323；NPN Transistor

FEATURES ♦ Collector Current Capability IC=70mA ♦ Collector Emitter Voltage VCEO=15V ♦ High power gain ♦ Low noise figure ♦ High transition frequency MECHANICAL DATA ♦ Case: SOT-323(SC-70-3)

文件：847.88 Kbytes 页数：7 Pages

佑风微电子

型号：BZX384-B39；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

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