1PS66SB17

Marking：N2；Package：SOT666；4 V, 30 mA low capacitance Schottky barrier diode

1.Generaldescription TripleisolatedplanarlowcapacitanceSchottkybarrierdiodeencapsulatedinaSOT666ultrasmall flatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •3isolateddiodes •Verylowdiodecapacitance •Verylowforwardvoltage •Ultrasm

AH3712-SA-7

Marking：N2；Package：SOT23；HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

BAS40LS

Marking：N2；Package：DFN1006BD-2；General-purpose Schottky diode

1.Generaldescription General-purposeSchottkydiodeinaleadlessultrasmallDFN1006BD-2(SOD882BD)Surface- MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance

BAS40LS-Q

Marking：N2；Package：DFN1006BD-2；General-purpose Schottky diode

1.Generaldescription General-purposeSchottkydiodeinaleadlessultrasmallDFN1006BD-2(SOD882BD)Surface- MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance

BC807DS

Marking：N2；Package：SC-74；PNP/PNP general purpose double transistors

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

BC807DS

Marking：N2；Package：SOT-26；PNP general purpose double transistor

FEATURES •Highcurrent(500mA) •600mWtotalpowerdissipation •ReplacestwoSOT23packagedtransistorsonsamePCBarea. APPLICATIONS •Generalpurposeswitchingandamplification •Push-pullamplifiers •Multi-phasesteppermotordrivers. DESCRIPTION PNPtransi

BC807DS-Q

Marking：N2；Package：TSOP6；PNP/PNP general purpose double transistors

1.Generaldescription PNP/PNPgeneral-purposedoubletransistorsinanSOT457(SC-74)plasticpackage. NPN/NPNcomplement:BC817DS-Q NPN/PNPcomplement:BC817DPN-Q 2.Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andreco

BFS520

Marking：N2；Package：SOT-323；NPN Transistor

FEATURES ♦CollectorCurrentCapabilityIC=70mA ♦CollectorEmitterVoltageVCEO=15V ♦Highpowergain ♦Lownoisefigure ♦Hightransitionfrequency MECHANICALDATA ♦Case:SOT-323(SC-70-3)

BZX384-B39

Marking：N2；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

BZX384-B39

Marking：N2；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol