4 V, 30 mA low Cd Schottky barrier diode

General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Features ■ Very low diode capacitance ■ Very low forward voltage ■ Very small SMD plastic packages Applications ■ Digital applications: ◆ Ultra high-speed switching

文件：49.75 Kbytes 页数：8 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N2；Package：SOT666；4 V, 30 mA low capacitance Schottky barrier diode

1. General description Triple isolated planar low capacitance Schottky barrier diode encapsulated in a SOT666 ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 3 isolated diodes • Very low diode capacitance • Very low forward voltage • Ultra sm

文件：180.92 Kbytes 页数：7 Pages

NEXPERIA

安世

4 V, 30 mA low C_d Schottky barrier diode

Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. • Very low diode capacitance\n• Very low forward voltage\n• Very small SMD plastic packages\n• AEC-Q101 qualified;

Nexperia

安世

Package：SOT-563，SOT-666；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 4V SOT666

Nexperia USA Inc.